IndiumV3, Chine, Analysis, bibRecord, 000453

Organic solar cells employing electrodeposited nickel oxide nanostructures as the anode buffer layer

Identifieur interne : 000453 ( Chine/Analysis ); précédent : 000452; suivant : 000454

Organic solar cells employing electrodeposited nickel oxide nanostructures as the anode buffer layer

Auteurs : RBID : Pascal:12-0201080

Descripteurs français

Pascal (Inist)
- Cellule solaire organique, Dépôt électrolytique, Nanostructure, Anode, Couche tampon, Densité courant, Couche ITO, Addition étain, Evaluation performance, Propriété électronique, Conversion énergie, Taux conversion, Eclairement, Modulation amplitude, Système tampon, Haute performance, Dispositif photovoltaïque, Oxyde de nickel, Oxyde d'indium, ITO, Couche de blocage d'électrons.

English descriptors

KwdEn :
- Amplitude modulation, Anode, Buffer layer, Buffer system, Conversion rate, Current density, Electrodeposition, Electron blocking layer, Electronic properties, Energy conversion, High performance, ITO layers, Illumination, Indium oxide, Nanostructure, Nickel oxide, Organic solar cells, Performance evaluation, Photovoltaic cell, Tin addition.

Abstract

In this work, an electrodeposited nickel oxide (NiO) nanostructure used as an anode buffer layer in organic photovoltaic cells has been studied. The structure of NiO films are tailored by current density and electrodeposition time to have nano-islands or interconnecting nano-rods on indium tin oxide surface. When -CF₃-modified NiO structures are used as hole transporting and electron blocking layers, the device performance is affected by the structure and electronic properties of NiO films. The best power conversion efficiency (3.05%) is achieved under an illumination of AM 1.5G (100 mW/cm²) for a device with the interconnecting nano-rods NiO buffer layer. This electrodepositing of NiO nanostructures provides an inexpensive and facile method to fabricate an efficient anode buffer for high performance photovoltaic device.

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to stream Main, to step Repository: 001741
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Links to Exploration step

Pascal:12-0201080

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Organic solar cells employing electrodeposited nickel oxide nanostructures as the anode buffer layer</title>
<author><name>HONGBIN YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Clean Energy & Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Chemical and Biomedical & Center for Advanced Bionano Systems, Nanyang Technological University, 70 Nanyang Drive</s1>
<s2>Singapore 637457</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Singapour</country>
<wicri:noRegion>Singapore 637457</wicri:noRegion>
</affiliation>
</author>
<author><name>CHENG GONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Clean Energy & Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>GUAN HONG GUAI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Clean Energy & Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>CHANG MING LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Clean Energy & Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Chemical and Biomedical & Center for Advanced Bionano Systems, Nanyang Technological University, 70 Nanyang Drive</s1>
<s2>Singapore 637457</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Singapore 637457</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">12-0201080</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0201080 INIST</idno>
<idno type="RBID">Pascal:12-0201080</idno>
<idno type="wicri:Area/Main/Corpus">001E35</idno>
<idno type="wicri:Area/Main/Repository">001741</idno>
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</publicationStmt>
<seriesStmt><idno type="ISSN">0927-0248</idno>
<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
<title level="j" type="main">Solar energy materials and solar cells</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amplitude modulation</term>
<term>Anode</term>
<term>Buffer layer</term>
<term>Buffer system</term>
<term>Conversion rate</term>
<term>Current density</term>
<term>Electrodeposition</term>
<term>Electron blocking layer</term>
<term>Electronic properties</term>
<term>Energy conversion</term>
<term>High performance</term>
<term>ITO layers</term>
<term>Illumination</term>
<term>Indium oxide</term>
<term>Nanostructure</term>
<term>Nickel oxide</term>
<term>Organic solar cells</term>
<term>Performance evaluation</term>
<term>Photovoltaic cell</term>
<term>Tin addition</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire organique</term>
<term>Dépôt électrolytique</term>
<term>Nanostructure</term>
<term>Anode</term>
<term>Couche tampon</term>
<term>Densité courant</term>
<term>Couche ITO</term>
<term>Addition étain</term>
<term>Evaluation performance</term>
<term>Propriété électronique</term>
<term>Conversion énergie</term>
<term>Taux conversion</term>
<term>Eclairement</term>
<term>Modulation amplitude</term>
<term>Système tampon</term>
<term>Haute performance</term>
<term>Dispositif photovoltaïque</term>
<term>Oxyde de nickel</term>
<term>Oxyde d'indium</term>
<term>ITO</term>
<term>Couche de blocage d'électrons</term>
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<front><div type="abstract" xml:lang="en">In this work, an electrodeposited nickel oxide (NiO) nanostructure used as an anode buffer layer in organic photovoltaic cells has been studied. The structure of NiO films are tailored by current density and electrodeposition time to have nano-islands or interconnecting nano-rods on indium tin oxide surface. When -CF<sub>3</sub>
-modified NiO structures are used as hole transporting and electron blocking layers, the device performance is affected by the structure and electronic properties of NiO films. The best power conversion efficiency (3.05%) is achieved under an illumination of AM 1.5G (100 mW/cm<sup>2</sup>
) for a device with the interconnecting nano-rods NiO buffer layer. This electrodepositing of NiO nanostructures provides an inexpensive and facile method to fabricate an efficient anode buffer for high performance photovoltaic device.</div>
</front>
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<fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0>
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<fA05><s2>101</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Organic solar cells employing electrodeposited nickel oxide nanostructures as the anode buffer layer</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>HONGBIN YANG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CHENG GONG</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GUAN HONG GUAI</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CHANG MING LI</s1>
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<fA14 i1="01"><s1>Institute for Clean Energy & Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>School of Chemical and Biomedical & Center for Advanced Bionano Systems, Nanyang Technological University, 70 Nanyang Drive</s1>
<s2>Singapore 637457</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA20><s1>256-261</s1>
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<fA21><s1>2012</s1>
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<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>42 ref.</s0>
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<fC01 i1="01" l="ENG"><s0>In this work, an electrodeposited nickel oxide (NiO) nanostructure used as an anode buffer layer in organic photovoltaic cells has been studied. The structure of NiO films are tailored by current density and electrodeposition time to have nano-islands or interconnecting nano-rods on indium tin oxide surface. When -CF<sub>3</sub>
-modified NiO structures are used as hole transporting and electron blocking layers, the device performance is affected by the structure and electronic properties of NiO films. The best power conversion efficiency (3.05%) is achieved under an illumination of AM 1.5G (100 mW/cm<sup>2</sup>
) for a device with the interconnecting nano-rods NiO buffer layer. This electrodepositing of NiO nanostructures provides an inexpensive and facile method to fabricate an efficient anode buffer for high performance photovoltaic device.</s0>
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<s5>03</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Anode</s0>
<s5>04</s5>
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<fC03 i1="04" i2="X" l="ENG"><s0>Anode</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Anodo</s0>
<s5>04</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Couche tampon</s0>
<s5>05</s5>
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<fC03 i1="05" i2="X" l="ENG"><s0>Buffer layer</s0>
<s5>05</s5>
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<fC03 i1="05" i2="X" l="SPA"><s0>Capa tampón</s0>
<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>08</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Conversión energética</s0>
<s5>11</s5>
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<fC03 i1="12" i2="X" l="FRE"><s0>Taux conversion</s0>
<s5>12</s5>
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<fC03 i1="12" i2="X" l="ENG"><s0>Conversion rate</s0>
<s5>12</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Factor conversión</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Eclairement</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Illumination</s0>
<s5>13</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Alumbrado</s0>
<s5>13</s5>
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<fC03 i1="14" i2="X" l="FRE"><s0>Modulation amplitude</s0>
<s5>14</s5>
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<fC03 i1="14" i2="X" l="ENG"><s0>Amplitude modulation</s0>
<s5>14</s5>
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<s5>14</s5>
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<s5>15</s5>
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<s5>15</s5>
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<fC03 i1="16" i2="X" l="FRE"><s0>Haute performance</s0>
<s5>16</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>17</s5>
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<s5>17</s5>
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<fC03 i1="17" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Oxyde de nickel</s0>
<s5>22</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Nickel oxide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Níquel óxido</s0>
<s5>22</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>23</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Couche de blocage d'électrons</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Electron blocking layer</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>156</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
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Organic solar cells employing electrodeposited nickel oxide nanostructures as the anode buffer layer

Organic solar cells employing electrodeposited nickel oxide nanostructures as the anode buffer layer

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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